Workshop on Electron Device Interface Technology


Invited Speakers

Special Lecture

  • Akira Toriumi
    Fundamentals of Polarization Switching and Ferroelectric Characteristics of HfO2"

Plenary Talks

  • Kunio Uchiyama (AIST)
    "AI Chip Design Center -Japan's AI Chip Initiative and Global Movement -"

  • Kenji Tsuda (Independent Tech Journalist)
    "Revival of Japan Semiconductors Should Make Use of Global Intelligence"

Invited Talks

  • Takahiro Mori (AIST)
    "High-temperature operation of TFET-based qubits for silicon quantum computers"

  • Hiroshi Nakashima (Kyushu Univ.)
    "Trap Characterization for Ge Gate Stacks by DLTS Method"

  • Hitoshi Wakabayashi (Tokyo Inst. of Tech.)
    「FETs using 2D semiconductor as a channel material」

  • Makoto Takamiya (Univ. of Tokyo)
    "Future Power Devices Using ICs and AI"

  • Takahiro Ohara (Renesas Electronics)
    "Impact of Homogeneously Dispersed Al Nanoclusters by Si-monolayer Insertion into Hf0.5Zr0.5O2 Film on FeFET Memory Array with Threshold Voltage Distribution"

  • Jun Okuno (Sony Semiconductor Slutions)
    "SoC compatible 1T1C FeRAM memory array based on ferroelectric Hf0.5Zr0.5O2"

Special Invited Talk

  • Hiroaki Arimura(imec)
    「Gate stack process optimization and fin surface oxidation control for Si-cap-free low-DIT SiGe pFET」

Rump Session

“Globalization and future of the Japanese semiconductor industry”

Invited Talks:

  • Koji Izunome (GlobalWafers Japan)
    "Why is silicon wafer manufacturing technology of Japan strong in the semiconductor market?"
  • Gishi Chung (Tokyo Electron)
    "Tokyo Electron ~ For Creating New Technology and Innovation ~"
  • Kazunari Ishimaru (Kioxia)
    "Semiconductors in Japan Now!"
  • Toshiyuki Tabata (LASSE)
    "Hints for sustainable innovation from France"
Recommended environment